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| XL/ML1225 DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. SCR 1 TO-92 1:CATHODE 2:GATE 3:ANODE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETERS Repetitive Peak Off-State Voltage On-State Current Average On-State Current Peak Reverse Gate Voltage Peak Gate Current Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature PART NO. SYMBOL XL1225 ML1225 VDRM VDRM IT(RMS) IT(AV) VGRM IGM PG(AV) Tj TSTG TSLD TEST CONDITION Tj=40 to 125C (rgk=1k) Tc=40C Half Cycle=180, Tc=40C IGR=10uA 10us Max. 20ms Max. MIN. MAX. UNITS RATING RATING 400 300 0.8 0.5 1 0.1 150 -40 -40 V A A V A W C C C 1.6mm from case 10s Max. 125 125 250 ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER Off state leakage current Off state leakage current On state voltage On state threshold voltage On state slops resistance Gate trigger current Gate trigger voltage Holding current Latching current Critical rate of voltage rise Critical rate of current rise Gate controlled delay time Commutated turn-off time SYMBOL IDRM IDRM TEST CONDITIONS @VDRM(RGK=1K), Tj=125C @VDRM(RGK=1K), Tj=25C AT IT=0.4A AT IT=0.8A Tj=125C Tj=125C VD=7V VD=7V RGK=1K RGK=1K VD=0.67*VDRM(RGK=1K), Tj=125C IG=10mA, dIG/dt=0.1A/s, Tj=125C IG=10mA, dIG/dt=0.1A/s, Tj=85C, VD=0.67*VDRM, VR=35V, IT=IT(AV) MIN MAX 0.1 1.0 1. 4 2.2 0.95 600 200 0.8 5 6 UNIT mA A V V m A V mA mA V/s A/s VT VT(TO) Rt IGT VGT IH IL DV/DT DV/DT TGD TG 500 200 s s UTC UNISONIC TECHNOLOGIES CO. LTD 1 XL/ML1225 PARAMETER Thermal resistance junc. to case Thermal resistance junc. to case SCR SYMBOL R JC R JA TEST CONDITIONS MIN MAX UNIT K/W K/W CLASSIFICATION OF hFE RANK RANGE B 50-100A C 100-200A AA 8-15A AB 15-20A AC 20-25A AD 25-50A UTC UNISONIC TECHNOLOGIES CO. LTD 2 |
Price & Availability of ML1225
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